HYG011N04LS1TA HUAYI 40V 320A N-Channel Power MOSFET TOLL

The HYG011N04LS1TA is a high-current 40V 320A N-Channel Enhancement Mode Power MOSFET manufactured by HUAYI Microelectronics.

Designed for high-efficiency and high-current power switching applications, the HYG011N04LS1TA combines extremely low drain-source on-resistance with high current capability and robust avalanche performance.

The device features a typical RDS(on) of only 0.9mΩ at VGS = 10V and 1.3mΩ at VGS = 4.5V, helping minimize conduction losses and improve system efficiency in demanding low-voltage, high-current applications.

With a continuous drain current rating of up to 320A at 25°C, pulsed drain current capability of up to 1200A, and maximum power dissipation of 250W, the HYG011N04LS1TA is well suited for battery management, inverter power systems and high-current switching circuits.

The device is supplied in a compact TOLL surface-mount package, providing high current density and efficient thermal performance.

HYG011N04LS1TA Key Specifications

- Part Number: HYG011N04LS1TA - Manufacturer: HUAYI Microelectronics - Product Type: Power MOSFET - Channel Type: N-Channel - MOSFET Type: Enhancement Mode - Drain-Source Voltage VDS: 40V - Continuous Drain Current ID: 320A @ 25°C - Continuous Drain Current ID: 226A @ 100°C - Pulsed Drain Current IDM: 1200A - Typical RDS(on): 0.9mΩ @ VGS = 10V - Maximum RDS(on): 1.2mΩ @ VGS = 10V - Typical RDS(on): 1.3mΩ @ VGS = 4.5V - Maximum RDS(on): 1.7mΩ @ VGS = 4.5V - Total Gate Charge Qg: 92nC Typical @ VGS = 10V - Gate Threshold Voltage VGS(th): 1V to 3V - Typical Gate Threshold Voltage: 1.8V - Maximum Gate-Source Voltage: ±20V - Input Capacitance Ciss: 5870pF - Output Capacitance Coss: 1256pF - Reverse Transfer Capacitance Crss: 63pF - Maximum Power Dissipation: 250W - Single-Pulse Avalanche Energy: 610mJ - Maximum Junction Temperature: 175°C - Package: TOLL - Mounting Type: Surface Mount - 100% Avalanche Tested - RoHS Compliant - Halogen-Free

HYG011N04LS1TA Features

Key features include:

- 40V drain-source voltage - High 320A continuous drain current - Ultra-low 0.9mΩ typical RDS(on) - 1200A pulsed drain current capability - Low conduction losses - High current density - 100% avalanche tested - Reliable and rugged construction - Fast power switching capability - 175°C maximum junction temperature - Compact TOLL power package - RoHS compliant and halogen-free

Typical Applications

The HYG011N04LS1TA is suitable for:

- Battery Management Systems (BMS) - Battery protection systems - Power management for inverter systems - Power inverters - High-current switching applications - Low-voltage power switching - Energy storage systems - Battery-powered equipment - High-current power conversion - Industrial power electronics

HYG011N04LS1TA Datasheet

Looking for the HYG011N04LS1TA datasheet PDF?

The HYG011N04LS1TA datasheet provides detailed technical information including electric