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STB18N60DM2 from STMicroelectronics is a 600 V, 12 A N-channel MOSFET supplied in a D2PAK package. It is intended for high-voltage power-switching designs where a compact surface-mount package is required.
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STB18N60DM2 from STMicroelectronics is a 600 V, 12 A N-channel MOSFET supplied in a D2PAK package. It is intended for high-voltage power-switching designs where a compact surface-mount package is required.
Key Specifications - Product type: N-channel MOSFET - Drain-source voltage: 600 V - Current rating: 12 A - Package: D2PAK
Typical Applications Suitable for high-voltage power conversion, switching and other electronic power-management designs requiring a 600 V N-channel MOSFET in a D2PAK package.
Documentation A Datasheet PDF is associated with the exact STB18N60DM2 listing. Contact HONGTE for document access and product information.
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