HYG013N04NA1B6 HUAYI 40V 354A N-Channel Power MOSFET TO-263-6L

The HYG013N04NA1B6 is a high-current 40V 354A N-Channel Enhancement Mode Power MOSFET manufactured by HUAYI Microelectronics.

Designed for low-voltage and high-current power switching applications, the HYG013N04NA1B6 combines extremely low drain-source on-resistance with high current capability and strong avalanche ruggedness.

The device features a typical RDS(on) of only 1.1mΩ and a maximum RDS(on) of 1.3mΩ at VGS = 10V, helping minimize conduction losses and improve efficiency in battery-powered and high-current systems.

With a continuous drain current rating of up to 354A at 25°C, 250A at 100°C, and pulsed drain current capability of up to 1440A, the HYG013N04NA1B6 is particularly suitable for Battery Management Systems, lithium battery protection boards, automotive jump starters and high-current load switching applications.

The device is supplied in a TO-263-6L surface-mount package, providing excellent current handling capability and thermal performance for compact high-power designs.

HYG013N04NA1B6 Key Specifications

- Part Number: HYG013N04NA1B6 - Manufacturer: HUAYI Microelectronics - Product Type: Power MOSFET - Configuration: Single - Channel Type: N-Channel - MOSFET Type: Enhancement Mode - Drain-Source Voltage VDS: 40V - Continuous Drain Current ID: 354A @ 25°C - Continuous Drain Current ID: 250A @ 100°C - Pulsed Drain Current IDM: 1440A - Typical RDS(on): 1.1mΩ @ VGS = 10V - Maximum RDS(on): 1.3mΩ @ VGS = 10V - Total Gate Charge Qg: 265nC Typical - Gate-Source Voltage VGS: ±20V - Gate Threshold Voltage VGS(th): 2V to 4V - Input Capacitance Ciss: 12097pF - Output Capacitance Coss: 1613pF - Reverse Transfer Capacitance Crss: 1028pF - Maximum Power Dissipation: 326W - Single Pulse Avalanche Energy EAS: 1418mJ - Maximum Junction Temperature: 175°C - Package: TO-263-6L - Mounting Type: Surface Mount - 100% Avalanche Tested - RoHS Compliant - Lead-Free

HYG013N04NA1B6 Features

Key features include:

- 40V N-Channel Power MOSFET - High 354A continuous drain current - Ultra-low 1.1mΩ typical RDS(on) - 1440A pulsed drain current capability - Low conduction losses - High current handling capability - 100% avalanche tested - Strong shock resistance - Reliable and rugged construction - High avalanche energy capability - 175°C maximum junction temperature - TO-263-6L surface-mount package - RoHS compliant and lead-free

Typical Applications

The HYG013N04NA1B6 is suitable for:

- Battery Management Systems (BMS) - Lithium battery protection boards - Car jump starters - Battery protection circuits - Load switches - High-current battery systems - Energy storage systems - High-current switching circuits - Battery-powered equipment - Low-voltage power management - Industrial power electronics

HYG013N04NA1B6 Datasheet

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