HYG013N04NA1B6

Product description

## HYG013N04NA1B6 HUAYI 40V 354A N-Channel Power MOSFET TO-263-6L The **HYG013N04NA1B6** is a high-current **40V 354A N-Channel Enhancement Mode Power MOSFET** manufactured by **HUAYI Microelectronics**. Designed for low-voltage and high-current power switching applications, the HYG013N04NA1B6 combines extremely low drain-source on-resistance with high current capability and strong avalanche ruggedness. The device features a typical **RDS(on) of only 1.1mΩ** and a maximum RDS(on) of **1.3mΩ at VGS = 10V**, helping minimize conduction losses and improve efficiency in battery-powered and high-current systems. With a continuous drain current rating of up to **354A at 25°C**, **250A at 100°C**, and pulsed drain current capability of up to **1440A**, the HYG013N04NA1B6 is particularly suitable for Battery Management Systems, lithium battery protection boards, automotive jump starters and high-current load switching applications. The device is supplied in a **TO-263-6L surface-mount package**, providing excellent current handling capability and thermal performance for compact high-power designs. ### HYG013N04NA1B6 Key Specifications - Part Number: HYG013N04NA1B6 - Manufacturer: HUAYI Microelectronics - Product Type: Power MOSFET - Configuration: Single - Channel Type: N-Channel - MOSFET Type: Enhancement Mode - Drain-Source Voltage VDS: 40V - Continuous Drain Current ID: 354A @ 25°C - Continuous Drain Current ID: 250A @ 100°C - Pulsed Drain Current IDM: 1440A - Typical RDS(on): 1.1mΩ @ VGS = 10V - Maximum RDS(on): 1.3mΩ @ VGS = 10V - Total Gate Charge Qg: 265nC Typical - Gate-Source Voltage VGS: ±20V - Gate Threshold Voltage VGS(th): 2V to 4V - Input Capacitance Ciss: 12097pF - Output Capacitance Coss: 1613pF - Reverse Transfer Capacitance Crss: 1028pF - Maximum Power Dissipation: 326W - Single Pulse Avalanche Energy EAS: 1418mJ - Maximum Junction Temperature: 175°C - Package: TO-263-6L - Mounting Type: Surface Mount - 100% Avalanche Tested - RoHS Compliant - Lead-Free ### HYG013N04NA1B6 Features Key features include: - 40V N-Channel Power MOSFET - High 354A continuous drain current - Ultra-low 1.1mΩ typical RDS(on) - 1440A pulsed drain current capability - Low conduction losses - High current handling capability - 100% avalanche tested - Strong shock resistance - Reliable and rugged construction - High avalanche energy capability - 175°C maximum junction temperature - TO-263-6L surface-mount package - RoHS compliant and lead-free ### Typical Applications The HYG013N04NA1B6 is suitable for: - Battery Management Systems (BMS) - Lithium battery protection boards - Car jump starters - Battery protection circuits - Load switches - High-current battery systems - Energy storage systems - High-current switching circuits - Battery-powered equipment - Low-voltage power management - Industrial power electronics ### HYG013N04NA1B6 Datasheet Looking for the **HYG013N04NA1B6 datasheet PDF**? The HYG013N04NA1B6 datasheet provides detailed technical i