HYG045N15NS1P HUAYI 150V 205A N-Channel Power MOSFET TO-220FB-3L

The HYG045N15NS1P is a high-current 150V N-Channel Power MOSFET from HUAYI Microelectronics, supplied in a TO-220FB-3L through-hole package.

Designed for demanding power switching applications, the HYG045N15NS1P combines high drain current capability with low on-resistance and rugged avalanche performance. The device supports a continuous drain current of up to 205A at 25°C and features a typical RDS(on) of approximately 4.5mΩ at VGS = 10V, helping reduce conduction losses in high-current power systems.

The HYG045N15NS1P is designed for applications requiring efficient and reliable power switching, including Battery Management Systems (BMS), motor control, battery-powered equipment, power conversion systems and other high-current switching circuits.

Key Specifications

- Part Number: HYG045N15NS1P - Manufacturer: HUAYI Microelectronics - Product Type: Power MOSFET - Channel Type: N-Channel - Drain-Source Voltage VDS: 150V - Continuous Drain Current ID: Up to 205A - Typical RDS(on): Approximately 4.5mΩ @ VGS = 10V - Gate-Source Voltage VGS: ±20V - Maximum Junction Temperature: 175°C - Package: TO-220FB-3L - Mounting Type: Through-Hole - Avalanche Tested - RoHS Compliant

Typical Applications

- Battery Management Systems (BMS) - Motor control systems - Battery protection circuits - High-current switching circuits - Power conversion systems - Industrial power electronics - Battery-powered equipment - DC power control systems

HYG045N15NS1P Stock and Price

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