HYG045N15NS1P

Product description

## HYG045N15NS1P HUAYI 150V 205A N-Channel Power MOSFET TO-220FB-3L The **HYG045N15NS1P** is a high-current **150V N-Channel Power MOSFET** from **HUAYI Microelectronics**, supplied in a **TO-220FB-3L** through-hole package. Designed for demanding power switching applications, the HYG045N15NS1P combines high drain current capability with low on-resistance and rugged avalanche performance. The device supports a continuous drain current of up to **205A at 25°C** and features a typical **RDS(on) of approximately 4.5mΩ at VGS = 10V**, helping reduce conduction losses in high-current power systems. The HYG045N15NS1P is designed for applications requiring efficient and reliable power switching, including **Battery Management Systems (BMS), motor control, battery-powered equipment, power conversion systems and other high-current switching circuits**. ### Key Specifications - Part Number: HYG045N15NS1P - Manufacturer: HUAYI Microelectronics - Product Type: Power MOSFET - Channel Type: N-Channel - Drain-Source Voltage VDS: 150V - Continuous Drain Current ID: Up to 205A - Typical RDS(on): Approximately 4.5mΩ @ VGS = 10V - Gate-Source Voltage VGS: ±20V - Maximum Junction Temperature: 175°C - Package: TO-220FB-3L - Mounting Type: Through-Hole - Avalanche Tested - RoHS Compliant ### Typical Applications - Battery Management Systems (BMS) - Motor control systems - Battery protection circuits - High-current switching circuits - Power conversion systems - Industrial power electronics - Battery-powered equipment - DC power control systems ### HYG045N15NS1P Stock and Price HONGTE provides sourcing support for **HYG045N15NS1P** and other HUAYI power semiconductor products. Contact HONGTE for current **HYG045N15NS1P stock, price, availability, lead time, bulk quantity requirements and datasheet information**.