Наличие и партия
Уточните наличие, код даты, состояние упаковки и необходимое количество. При объединённом складе возможны разные партии.
MOSFET · TO-220
MDP20N116 — товар производителя MagnaChip в каталоге HONGTE.
Описание товараФотография товара. Состояние текущей партии уточняйте у HONGTE.
Окончательные цена и наличие подтверждаются в предложении.
MDP20N116 — товар производителя MagnaChip в каталоге HONGTE.
Перед заказом укажите полный код модели, нужное количество и требования к упаковке. Наличие, цену, состояние партии и срок поставки подтверждает менеджер при подготовке предложения. Электрические и механические характеристики проверяйте по документации производителя.
MDP20N116PTTH MagnaChip 200V 95A N-Channel Power MOSFET TO-220
The MDP20N116PTTH is a high-performance 200V 95A Single N-Channel Trench Power MOSFET manufactured by MagnaChip Semiconductor.
Based on MagnaChip's MV MOSFET GEN3T technology, the MDP20N116PTTH combines high current capability, low drain-source on-resistance and efficient switching performance for demanding power electronics applications.
The device features a maximum RDS(on) of 11.6mΩ at VGS = 10V and a typical total gate charge of 83nC, helping designers achieve low conduction losses and efficient switching performance.
Supplied in an industry-standard TO-220 through-hole package, the MDP20N116PTTH is suitable for motor drives, battery-powered systems, DC-DC converters, AC-DC converters and other high-current power switching applications.
MDP20N116PTTH Key Specifications
- Part Number: MDP20N116PTTH - Manufacturer: MagnaChip Semiconductor - Product Type: Power MOSFET - Configuration: Single - Channel Type: N-Channel - MOSFET Technology: Trench MOSFET / GEN3T - Drain-Source Voltage VDS: 200V - Continuous Drain Current ID: 95A - Pulsed Drain Current IDM: 380A - RDS(on): 11.6mΩ Max. @ VGS = 10V - Typical RDS(on): 10.6mΩ - Total Gate Charge Qg: 83nC Typical - Gate-Source Threshold Voltage: 3.0V to 4.5V - Maximum Gate-Source Voltage: ±20V - Maximum Power Dissipation: 300W - Maximum Junction Temperature: 175°C - Package: TO-220 - Mounting Type: Through-Hole - RoHS Compliant - Halogen Free
Features
The MDP20N116PTTH provides a combination of low conduction resistance, high current handling capability and reliable switching performance.
Key features include:
- 200V drain-source voltage rating - 95A continuous drain current - Low 11.6mΩ maximum RDS(on) - N-Channel Trench MOSFET technology - High current handling capability - Enhanced avalanche ruggedness - High switching efficiency - 175°C maximum junction temperature - Standard TO-220 package - Suitable for demanding power applications
Typical Applications
The MDP20N116PTTH can be used in applications including:
- Brushed motor drive systems - BLDC motor drives - Battery-powered systems - DC-DC converters - AC-DC converters - Switching power supplies - Power inverters - Industrial power equipment - High-current switching circuits - Battery management and power systems - Power conversion equipment
MDP20N116PTTH Datasheet
Looking for the MDP20N116PTTH datasheet PDF?
The MDP20N116PTTH datasheet provides detailed technical information including electrical characteristics, absolute maximum ratings, switching characteristics, thermal performance, safe operating area, package dimensions and typical performance curves.
View or download the MDP20N116PTTH MagnaChip Datasheet PDF from the datasheet section of this product page.
MDP20N116PTTH Stock and Price
HONGTE provides electronic component sourcing services for MDP20N116PTTH and other MagnaChip power semiconductor produc
Проверьте точный код модели и характеристики по документации производителя.
Уточните наличие, код даты, состояние упаковки и необходимое количество. При объединённом складе возможны разные партии.
Сообщите страну доставки. Стоимость и сроки рассчитываются индивидуально. Доступные способы оплаты: T/T · PayPal.
Передайте менеджеру модель, задачу и требования к поставке.
Отправьте список компонентов для общего предложения.