MDP20N116
MOSFECT · TO-220
Product photograph · confirm current lot condition with our team
- Package / case
- TO-220
- Date code
- 2026
- Lead time
- On request
Confirm current stock, pricing and delivery with our sourcing team.
Product description
## MDP20N116PTTH MagnaChip 200V 95A N-Channel Power MOSFET TO-220 The **MDP20N116PTTH** is a high-performance **200V 95A Single N-Channel Trench Power MOSFET** manufactured by **MagnaChip Semiconductor**. Based on MagnaChip's MV MOSFET GEN3T technology, the MDP20N116PTTH combines high current capability, low drain-source on-resistance and efficient switching performance for demanding power electronics applications. The device features a maximum **RDS(on) of 11.6mΩ at VGS = 10V** and a typical total gate charge of **83nC**, helping designers achieve low conduction losses and efficient switching performance. Supplied in an industry-standard **TO-220 through-hole package**, the MDP20N116PTTH is suitable for motor drives, battery-powered systems, DC-DC converters, AC-DC converters and other high-current power switching applications. ### MDP20N116PTTH Key Specifications - Part Number: MDP20N116PTTH - Manufacturer: MagnaChip Semiconductor - Product Type: Power MOSFET - Configuration: Single - Channel Type: N-Channel - MOSFET Technology: Trench MOSFET / GEN3T - Drain-Source Voltage VDS: 200V - Continuous Drain Current ID: 95A - Pulsed Drain Current IDM: 380A - RDS(on): 11.6mΩ Max. @ VGS = 10V - Typical RDS(on): 10.6mΩ - Total Gate Charge Qg: 83nC Typical - Gate-Source Threshold Voltage: 3.0V to 4.5V - Maximum Gate-Source Voltage: ±20V - Maximum Power Dissipation: 300W - Maximum Junction Temperature: 175°C - Package: TO-220 - Mounting Type: Through-Hole - RoHS Compliant - Halogen Free ### Features The MDP20N116PTTH provides a combination of low conduction resistance, high current handling capability and reliable switching performance. Key features include: - 200V drain-source voltage rating - 95A continuous drain current - Low 11.6mΩ maximum RDS(on) - N-Channel Trench MOSFET technology - High current handling capability - Enhanced avalanche ruggedness - High switching efficiency - 175°C maximum junction temperature - Standard TO-220 package - Suitable for demanding power applications ### Typical Applications The MDP20N116PTTH can be used in applications including: - Brushed motor drive systems - BLDC motor drives - Battery-powered systems - DC-DC converters - AC-DC converters - Switching power supplies - Power inverters - Industrial power equipment - High-current switching circuits - Battery management and power systems - Power conversion equipment ### MDP20N116PTTH Datasheet Looking for the **MDP20N116PTTH datasheet PDF**? The MDP20N116PTTH datasheet provides detailed technical information including electrical characteristics, absolute maximum ratings, switching characteristics, thermal performance, safe operating area, package dimensions and typical performance curves. View or download the **MDP20N116PTTH MagnaChip Datasheet PDF** from the datasheet section of this product page. MDP20N116PTTH Stock and Price HONGTE provides electronic component sourcing services for **MDP20N116PTTH** and other MagnaChip power semiconductor produc
MDP20N116 Datasheet
MDP20N116 — MagnaChip, MOSFECT, TO-220. A product document is available below. Review the listed specifications and confirm stock, pricing and delivery through an RFQ.
- MDP20N116PTTH.PDF
MagnaChip
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Specifications
- Manufacturer
- MagnaChip
- SKU
- MDP20N116
- Package / case
- TO-220
- Date code
- 2026
- Minimum order
- 1 pcs
- Lead time
- On request
Datasheet / Documents
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Quantity pricing
| Quantity | Unit price (USD) |
|---|---|
| 1+ | $0.55 |
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