IRFB3207PBF is an Infineon / International Rectifier 75 V N-channel power MOSFET in a three-lead TO-220AB through-hole package. It is used in power-switching designs such as switch-mode power supplies, synchronous rectification and UPS circuits.

Core specifications Drain-source voltage rating: 75 V. On-resistance: 3.6 mOhm typical and 4.5 mOhm maximum at VGS = 10 V, ID = 75 A and TJ = 25 C. These are pulsed-test values; the datasheet specifies pulse width up to 400 microseconds and duty cycle up to 2%. Gate-source absolute maximum: +/-20 V. Junction temperature range: -55 C to +175 C.

Package and connections TO-220AB, three leads. With the marked front facing you and the leads pointing down, pin 1 is Gate, pin 2 is Drain and pin 3 is Source. The metal mounting tab is connected to Drain. Review the manufacturer's mechanical drawing and use appropriate thermal and electrical isolation for your assembly.

Current and thermal design The datasheet explicitly gives a 75 A package limitation. Higher calculated current ratings in the document must not be treated as an unrestricted usable package current. Check safe operating area, case temperature, cooling, gate drive and switching losses before selecting the part for an application. On-resistance rises with temperature.

Documentation and lifecycle The linked official manufacturer datasheet covers IRFB3207PbF together with related IRFS3207PbF and IRFSL3207PbF package versions; use the IRFB / TO-220AB sections. Infineon currently lists IRFB3207 as discontinued. Confirm the exact ordering suffix and procurement suitability for an existing design, or review a qualified replacement for a new design.

Product image and ordering The supplied image shows the IRFB3207 top mark and legacy IOR branding. The visible P431P and RBJZ markings are retained and are not a guarantee of the current inventory lot or date code. Contact HONGTE to confirm quantity, quotation, lot information, packing and delivery before ordering.