MDDG04R01L

Product description

## MDDG04R01L MDD 40V 320A N-Channel Power MOSFET TOLL The **MDDG04R01L** is a high-current **40V 320A N-Channel Power MOSFET** manufactured by **MDD (Microdiode Semiconductor)** and supplied in a compact **TOLL surface-mount package**. Built using an advanced shielded-gate power trench process, the MDDG04R01L is optimized for extremely low conduction resistance while maintaining efficient switching performance. It features an RDS(on) of approximately **0.6mΩ at VGS = 10V**, with a specified maximum of approximately **0.85mΩ under rated test conditions**, helping reduce power losses in high-current applications. The device supports a continuous drain current of up to **320A**, a typical gate charge of **130nC**, and a power dissipation rating of **125W**. Its low reverse-recovery charge and avalanche-tested design make it suitable for demanding power conversion and switching systems. Typical applications include **Battery Management Systems (BMS), motor drivers, uninterruptible power supplies, PWM power stages, micro solar inverters and other low-voltage high-current switching circuits**. HONGTE provides sourcing support for **MDDG04R01L**, including current stock, pricing, lead time, bulk quantity requirements and datasheet information.