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MOSFET · TO-247
HY5012W is a 125V 300A N-Channel Enhancement Mode Power MOSFET manufactured by HUAYI Semiconductor. Featuring a typical RDS(on) of 2.9mΩ and a maximum RDS(on) of 3.6mΩ at VGS = 10V, the device is supplied in a TO-247A-3L package and is designed for power management in inverter systems.
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HY5012W is a 125V 300A N-Channel Enhancement Mode Power MOSFET manufactured by HUAYI Semiconductor. Featuring a typical RDS(on) of 2.9mΩ and a maximum RDS(on) of 3.6mΩ at VGS = 10V, the device is supplied in a TO-247A-3L package and is designed for power management in inverter systems.
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