Infineon IPDQ65R008CM8 is a 650 V N-channel superjunction power MOSFET from the CoolMOS CM8 family. Its Q-DPAK (PG-HDSOP-22) surface-mount package provides top-side cooling and a separate driver-source connection.

Key specifications • Drain-source breakdown voltage: 650 V minimum at VGS = 0 V and ID = 1 mA. • RDS(on): 8 mΩ maximum at VGS = 10 V, ID = 125 A and Tj = 25°C. • Integrated fast body diode and .XT interconnection technology. • Operating junction temperature: -55°C to +150°C; extended operation has datasheet restrictions.

Typical design applications include switching power supplies, PFC stages and LLC resonant converters for datacenter and telecom power systems. Select gate-drive circuitry, cooling and operating conditions using the official datasheet and safe-operating-area limits.

HONGTE listing: USD 25 per piece; listed inventory 1,700 PCS. The supplied main image shows devices marked 65R008C8 in carrier tape. Detailed graphics illustrate technical features and are not additional photographs of the inventory lot. Date code, lot traceability, packaging quantity and delivery schedule should be confirmed before ordering.