IXFX44N80P is an IXYS Polar HiPerFET N-channel enhancement-mode power MOSFET in a three-lead PLUS247 through-hole package. Its fast intrinsic diode and avalanche-rated construction support power-switching designs.

Key manufacturer ratings include an 800 V drain-source limit and 44 A continuous drain current at a case temperature of 25°C. Maximum on-resistance is 190 mΩ at VGS = 10 V, ID = 22 A and Tj = 25°C, using a pulse test of no more than 300 µs with a duty cycle of no more than 2%.

The continuous gate-source voltage limit is ±30 V. The specified junction-temperature range is −55°C to +150°C. Pin connections are 1: Gate, 2: Drain and 3: Source; the metal tab is also Drain. IXFX uses PLUS247, not the TO-264 package of IXFK44N80P.

Review the manufacturer's safe operating area, cooling requirements and package drawing before design-in. Maximum voltage, current and dissipation ratings do not represent a simultaneous operating point. Contact HONGTE to confirm available quantity, lot details, packaging and lead time before ordering.