MS12N150HGC0 is a MASPOWER planar-process N-channel power MOSFET in a three-lead TO-247 through-hole package. It is a high-voltage discrete semiconductor for power-switching designs. The final character in the part number is the digit 0.

The manufacturer datasheet specifies a 1500 V drain-source rating and continuous drain current of 12 A at a case temperature of 25°C, or 8 A at 100°C. Maximum RDS(on) is 1.8 Ω (1.3 Ω typical) at VGS = 10 V, ID = 1 A and Tcase = 25°C. The datasheet's pulse-test note specifies a pulse width of no more than 300 µs and a duty cycle of no more than 2%.

The specified junction-temperature range is −55°C to +150°C. Check the original datasheet for safe operating area, switching conditions, pin connections, package dimensions and cooling requirements. Maximum voltage and current ratings are not a simultaneous operating point.

HONGTE lists this exact manufacturer part number for quotation. Confirm the available quantity, lot details, condition, packaging and lead time before ordering; inventory quantity has not been confirmed.